JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
KTC4075 TRANSISTOR (NPN) FEATURES z Excellent h FE linearity z High h FE z
Low Noise z
Complementary to KTA2014 MAXIMUM RATINGS(T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions M in M ax U nit Collector-base breakdown voltage
V (BR)CBO I C = 100μA, I E =0 60 V Collector-emitter breakdown voltage
V (BR)CEO I C = 1mA, I B =0 50 V Emitter-base breakdown voltage
V (BR)EBO I E = 100μA, I C =0 5 V Collector cut-off current
I CBO V CB =60V, I E =0 0.1 μA Emitter cut-off current
I EBO V EB =5V, I C =0 0.1 μA DC current gain
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h FE V CE = 6V, I C =2mA 70 700 Collector-emitter saturation voltage
V CE (sat ) I C =100mA, I B = 10mA 0.25 V Transition frequency
f T V CE =10V, I C = 1mA 80 MHz Collector output capacitance
C ob V CE =10V, I E =0, f=1MHz 3.5 pF Noise figure NF V CE =6V,I E =0.1mA, f=1KHz,R G =10K Ω 10 dB
CLASSIFICATION OF h FE
Rank
O Y GR BL Range
70~140 120~240 200~400 350~700 Marking LO LY LGR LBL
A,May,2011
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【南京南山半导体有限公司 — 长电贴片三极管选型资料】 www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】
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The bottom gasket
休宁天气预报The top gasket
3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box情怨3完整版在线观看
with the tape Seal the box
with the tape Stamp “EMPTY”
on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm
